PECVD Plasma Enhanced CVD Tube Furnace

PECVD tube furnace system(plasma enhanced chemical vapor depostion) is special euqipment for growth of high quality thin film on kinds of substrates.

Depostion temperature is adjustable from 100℃ to 1100℃,especially suitable for technology research of kinds of thin films in the laboratory.

Applicable for SiO2, SiNx ,, SiONx a-Si thin film deposition and diamond like carbon thin film depostion, at the same time the products can achieve TEOS source deposition, SiC film deposition, and other deposition liquid or gaseous source materials, especially for high efficiency protective layer film deposition of organic materials and no damage passivation film deposition under a specific temperature.

 

产品描述

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[/modal][button link=”” color=”default” size=”” stretch=”” type=”” shape=”” target=”_self” title=”” gradient_colors=”#1e73be|” gradient_hover_colors=”|” accent_color=”” accent_hover_color=”” bevel_color=”” border_width=”” icon=”fa-commenting-o” icon_position=”left” icon_divider=”no” modal=”Contactus” animation_type=”0″ animation_direction=”left” animation_speed=”1″ animation_offset=”” alignment=”” class=”” id=””]Inquiry us[/button][one_full last=”yes” spacing=”yes” center_content=”no” hide_on_mobile=”no” background_color=”” background_image=”” background_repeat=”no-repeat” background_position=”left top” hover_type=”none” link=”” border_position=”all” border_size=”0px” border_color=”” border_style=”” padding=”” margin_top=”” margin_bottom=”” animation_type=”” animation_direction=”” animation_speed=”0.1″ animation_offset=”” class=”” id=””][title size=”1″ content_align=”left” style_type=”default” sep_color=”” margin_top=”” margin_bottom=”” class=”” id=””]PECVD Plasma Enhanced CVD Tube Furnace System Introduction:[/title][fusion_text]

NBD-PECVD1200-80ITD2Z is a CE certified compact PE-CVD (Plasma Enhanced Chemical Vapor Deposition) tube furnace system which consists of 500W RF plasma source, 80mm optional split tube furnace, 2 channels precision mass flow meter with gas mixing tank, and high-quality mechanical pump.  The PE-CVD furnace is an ideal and affordable tool to deposit thin films or grow nanowire from a gas state (vapor) to a solid state, and benefits:
  • Lower temperature processing compared to conventional CVD.
  • Film stress can be controlled by high/low frequency mixing techniques.
  • Control over stoichiometry via process conditions.
  • Offers a wide range of material deposition, including SiOx, SiNx, SiOxNy and Amorphous silicon (a-Si:H) deposition.

[/fusion_text][/one_full][one_full last=”yes” spacing=”yes” center_content=”no” hide_on_mobile=”no” background_color=”” background_image=”” background_repeat=”no-repeat” background_position=”left top” hover_type=”none” link=”” border_position=”all” border_size=”0px” border_color=”” border_style=”” padding=”” margin_top=”” margin_bottom=”” animation_type=”” animation_direction=”” animation_speed=”0.1″ animation_offset=”” class=”” id=””][title size=”1″ content_align=”left” style_type=”default” sep_color=”” margin_top=”” margin_bottom=”” class=”” id=””]PECVD Plasma Enhanced CVD Tube Furnace System Application:[/title][checklist icon=”fa-check-square-o” iconcolor=”#aaaaaa” circle=”no” circlecolor=”” size=”13px” class=”” id=””][li_item icon=””]Plasma induced surface modification[/li_item][li_item icon=””]Plasma cleaning[/li_item][li_item icon=””]Plasma polymerization[/li_item][li_item icon=””]A variety of films deposited on the surface of SiOx, SiNx, amorphous silicon, microcrystalline silicon, nano-silicon, SiC, DLC, etc.[/li_item][li_item icon=””]selective growth of the carbon nanotubes (CNT)[/li_item][/checklist][title size=”1″ content_align=”left” style_type=”default” sep_color=”” margin_top=”” margin_bottom=”” class=”” id=””]PECVD Plasma Enhanced CVD Tube Furnace System Parameter:[/title][fusion_text]

  • Model: NBD-PECVD1200-80ITD2Z
  • Special screw dual reaction chamber system
  • Mechanical pumpwith control power
  • RF generator
  • Fully digital touch screen temperature control system
  • 2 channel mass flow meter (three channel mass flow meter available)
  • PECVDdepostion: SiO2, SiNx ,, SiONx a-Si thin film deposition and diamond like carbon thin film depostion
  • uniformty deviation:≤ ± 4% ( within 3inch)
  • working space: 3inch, 10pS
  • Sample size:2-3″
  • working temp: 100~1200℃
  • temperature control accuracy: ≤ ±1℃
  • Model: NBD-PECVD1200-80ITD2Z
  • Cleaning and coating RFpower: 20~200Wadjustable
  • Tube diameter: Φ80mm
  • Length of Heating zone: 200mm
  • Max temperature: 1200℃
  • Size: L1300xH1260xW820
  • Power:AC220V,4KW
  • Weight: 360kg

[/fusion_text][/one_full][one_full last=”yes” spacing=”yes” center_content=”no” hide_on_mobile=”no” background_color=”” background_image=”” background_repeat=”no-repeat” background_position=”left top” hover_type=”none” link=”” border_position=”all” border_size=”0px” border_color=”” border_style=”” padding=”” margin_top=”” margin_bottom=”” animation_type=”” animation_direction=”” animation_speed=”0.1″ animation_offset=”” class=”” id=””][title size=”1″ content_align=”left” style_type=”default” sep_color=”” margin_top=”” margin_bottom=”” class=”” id=””]PECVD Plasma Enhanced CVD Tube Furnace System Working Principle:[/title][fusion_text][fusion_text]PECVD Plasma Enhanced CVD Tube Furnace System Working Principle

PECVD tube furnace system
PECVD tube furnace system

[/fusion_text][fusion_text]The gas is ionized and its activity is enhanced when gas goes through RF generator. After that gas moves to the heating temperature zone and deposit on the surface of the substrates.[/fusion_text][/one_full]

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